Surface Characterization of YBa2Cu3Ox(001) Single-Crystal Substrates for Homoepitaxial Growth
Surface Characterization of YBa2Cu3Ox(001) Single-Crystal Substrates for Homoepitaxial Growth
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同质外延生长 YBa2Cu3Ox(001) 单晶衬底的表面表征
DOI：
10.1143/jjap.35.l421
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发表时间：
1996
影响因子：
1.5
通讯作者：
Tadataka Morishita Tadataka Morishita
中科院分区：
文献类型：
--
作者：
H. Zama;Furen Wang;S. Koyama;Yuh Shiohara Yuh Shiohara;Tadataka Morishita Tadataka Morishita
用卢瑟福背散射谱（Rutherford Backscattering Spectrometry）测定了10×10 mm的YBa_2Cu_3Ox（001）单晶衬底的结晶度，其最小χ值为1.8%，用X射线形貌术（XRD）测定了5×5 mm的晶粒尺寸，用原子力显微镜（AFM）观察了具有单胞台阶的表面形貌。然而，大约一个单位细胞厚的降解层的表面上，这是观察到的角度分辨X射线光电子能谱，提出了必须解决的问题。这些分析表明，提拉法生长的YBa_2Cu_3 O_x单晶是一种很有前途的同质外延生长衬底材料。
We have evaluated the properties of YBa2Cu3Ox (001) single-crystal substrates with areas as large as 10×10 mm. They have good crystallinity with a χ min value of 1.8% determined by Rutherford backscattering spectrometry, grains with areas as large as 5×5 mm confirmed by X-ray topography, and excellent surface morphology with unit-cell steps which were observed by atomic force microscopy. However, approximately one unit-cell-thick degraded layer on the surface, which was observed by angle-resolved X-ray photoelectron spectroscopy, presents problems which must be resolved. These analyses indicate that YBa2Cu3Ox single crystal grown by the pulling method is a promising substrate material for homoepitaxial growth.