Seed-Free Fabrication of Highly Bi-Axially Oriented Poly-Si Thin Films by Continuous-Wave Laser Crystallization with Double-Line Beams
Seed-Free Fabrication of Highly Bi-Axially Oriented Poly-Si Thin Films by Continuous-Wave Laser Crystallization with Double-Line Beams
复制标题
DOI：
10.1149/1.3610410
复制
发表时间：
2011-01-01
影响因子：
3.9
通讯作者：
Ito, Takashi
中科院分区：
文献类型：
--
作者：
Kuroki, Shin-Ichiro;Kawasaki, Yuya;Ito, Takashi
采用平行双线光束连续波激光结晶技术，在石英衬底上成功制备了具有超长晶粒（> ~ 100 μ m）的高双轴取向多晶硅薄膜。新技术限制了晶体成核时间，选择性地促进了特定取向的晶核的生长，使其优先生成。该技术获得了在激光横向结晶面、横向侧面面和表面上分别具有（110）、（111）和（211）晶体取向的高取向硅晶粒。所有的硅晶粒在激光扫描方向上拉长，呈线性排列，长度超过100 μ m，宽度超过0.7 μ m。对激光结晶的多晶硅薄膜进行了精确的晶体学研究，观察到典型的电非活性CSL Sigma 3孪晶界。这种技术可以同时增强晶粒尺寸和控制晶体取向。(C) 2011电化学学会。[DOI: 10.1149/1.3610410]版权所有。
Highly bi-axially oriented poly-Si thin films with very long grains (>100 mu m) were successfully fabricated on quartz substrates by continuous wave laser crystallization with parallel double-line beams, without seed crystals. The newly-developed technique restricts crystal nucleation time and enhances growth of crystal nuclei of a specific orientation selectively, which is preferentially generated. The technique achieved highly-oriented silicon grains having (110), (111) and (211) crystal orientations in the laser lateral crystallized plane, the transverse side plane and the surface plane, respectively. All the silicon grains were elongated in the laser-scanning direction and linearly arranged with a length of over 100 mu m and a width of 0.7 mu m. The laser-crystallized poly-Si films were crystallographically investigated precisely, and electrically inactive CSL Sigma 3 twin boundaries were typically observed. This technique enables simultaneous enhancement of grain size and control of crystal orientation. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3610410] All rights reserved.