Impact ionization model for full band Monte Carlo simulation
Impact ionization model for full band Monte Carlo simulation
复制标题
用于全带蒙特卡罗模拟的碰撞电离模型
DOI：
10.1063/1.356112
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发表时间：
1994
影响因子：
3.2
通讯作者：
M. Takenaka
中科院分区：
文献类型：
--
作者：
Y. Kamakura;H. Mizuno;M. Yamaji;M. Morifuji;K. Taniguchi;C. Hamaguchi;T. Kunikiyo;M. Takenaka
基于经验赝势法，从波函数和能带结构出发，对硅中的冲击电离率进行了数值推导。计算得到的冲击电离率与幂指数为4.6的解析公式拟合良好，表明冲击电离率存在软阈值，这源于Si能带结构的复杂性。计算得到的冲击电离率在电子能量较低（e<3 eV）时表现出较强的各向异性，而在电子能量较高时表现为各向同性。数值计算还表明，二次产生的载流子的平均能量与它们产生时的一次电子能量呈线性关系。利用新导出的碰撞电离率进行了全波段蒙特卡罗模拟，结果表明计算出的量子产率和电离系数与实验数据吻合较好。
The impact ionization rate in silicon is numerically derived from wave functions and energy band structure based on an empirical pseudopotential method. The calculated impact ionization rate is well fitted to an analytical formula with a power exponent of 4.6, indicating soft threshold of impact ionization rate, which originates from the complexity of the Si band structure. The calculated impact ionization rate shows strong anisotropy at low electron energy (e<3 eV), while it becomes isotropic at higher energy. Numerical calculation also reveals that the average energy of secondary generated carriers depends linearly on the primary electron energy at the moment of their generation. A full band Monte Carlo simulation using the newly derived impact ionization rate demonstrates that calculated quantum yield and ionization coefficient agree well with reported experimental data.