Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb s-1 and a new scheme of 3R regenerators
Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb s-1 and a new scheme of 3R regenerators
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DOI：
10.1088/0957-0233/13/11/304
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发表时间：
2002-11-01
影响因子：
2.4
通讯作者：
Ishikawa, H
中科院分区：
文献类型：
--
作者：
Sugawara, M;Akiyama, T;Ishikawa, H
本文介绍了用于高比特率光信号处理的量子点半导体光放大器的原理和仿真。该理论包括量子点的空间隔离、离散能态和湿层之间的载流子弛豫和激发、在非均匀展宽下按光学谐振频率对量子点进行分组以及单点增益的均匀展宽，这些都对放大器的性能至关重要。我们发现，在至少160gb s（-1）的光脉冲序列下，光谱孔燃烧会导致高速增益饱和，而图案效应可以忽略不计，并且自组装的InGaAs/GaAs量子点soa的响应速度比体InGaAsP soa快2到3个数量级，160 Gb s-1信号的增益饱和大一个数量级。当通道间距在均匀展宽范围内时，两个波长通道之间的交叉增益调制可以实现开关功能。这些结果表明量子点soa在全光高速开关中的巨大潜力。作为其可能的应用之一，我们提出了一种新的“量子点3R再生器”信号处理方案。
This paper presents a theory and simulation of quantum-dot semiconductor optical amplifiers (SOAs) for high-bit-rate optical signal processing. The theory includes spatial isolation of quantum dots, carrier relaxation and excitation among the discrete energy states and the wetting layer, grouping of dots by their optical resonant frequency under the inhomogeneous broadening, and the homogeneous broadening of the single-dot gain, which are all essential to the amplifier performance. We show that high-speed gain saturation occurs due to spectral hole burning under the optical pulse trains up to at least 160 Gb s(-1) with negligible pattern effect, and that the self-assembled InGaAs/GaAs quantum-dot SOAs have about two to three orders faster response speed than bulk InGaAsP SOAs, with one order larger gain saturation for the 160 Gb s-1 signals. We also show that switching functions can be realized by the cross gain modulation between the two wavelength channels when the channel separation is within the homogeneous broadening. These results indicate great potential of quantum-dot SOAs for all-optical high-speed switches. As one of their possible applications, we propose a new signal-processing scheme of a 'quantum-dot 3R regenerator'.