High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric
High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric
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使用超薄溶液加工 ZrOx 电介质的高性能全非晶双层金属氧化物薄膜晶体管
DOI：
10.1063/1.4895782
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发表时间：
2014-09-15
影响因子：
4
通讯作者：
Martins, R.
中科院分区：
文献类型：
--
作者：
Liu, G. X.;Liu, A.;Martins, R.
在这项研究中，我们报告了高性能非晶In2O3/InZnO双层金属氧化物（BMO）薄膜晶体管（TFT）使用超薄溶液处理的非晶ZrOx介电介质。薄薄的一层In2O3提供了更高的载流子浓度，从而最大化电荷积累和产生高载流子迁移率。一层厚的InZnO非晶层控制电荷电导率，从而产生低的关断电流和合适的阈值电压。结果表明，BMO TFT的场效应迁移率（37.9 cm2/V s）高于单层InZnO TFT （7.6 cm2/V s）。除此之外，我们还获得了开关电流比为109，亚阈值摆幅电压为120 mV/ 10年，在正偏置应力下2.5 h的电压位移≤0.4 V，栅极电压为3 V，漏极电压为1 V。这些数据表明，BMO TFT作为开关低功耗晶体管具有广泛的应用潜力。
In this study, we report high-performance amorphous In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using an ultra-thin solution-processed amorphous ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the charge accumulation and yielding high carrier mobility. A thick amorphous layer of InZnO controls the charge conductance resulting in low off-state current and suitable threshold voltage. As a consequence, the BMO TFT showed higher filed-effect mobility (37.9 cm2/V s) than single-layer InZnO TFT (7.6 cm2/V s). Apart from that we obtain an on/off current ratio of 109, a subthreshold swing voltage of 120 mV/decade, and a voltage shift ≤ 0.4 V under positive bias stress for 2.5 h, for a gate voltage of 3 V and drain voltage of 1 V. These data demonstrate that the BMO TFT has great potential for a broad range of applications as switching low-power transistors.