Nano-Scale Profile of the Dielectric Constant Near the Si/oxide Interface: A First-Principles Approach
Nano-Scale Profile of the Dielectric Constant Near the Si/oxide Interface: A First-Principles Approach
复制标题
硅/氧化物界面附近介电常数的纳米级分布:第一性原理方法
DOI:
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发表时间:
2007
期刊:
影响因子:
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通讯作者:
A. Natori
中科院分区:
文献类型:
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作者:
J. Nakamura;S. Wakui;S. Eguchi;R. Yanai;A. Natori