Multifunctional behaviors of an indium tin oxide/PbLa(ZrTi)O3/indium tin oxide wafer illuminated by ultraviolet light
Multifunctional behaviors of an indium tin oxide/PbLa(ZrTi)O3/indium tin oxide wafer illuminated by ultraviolet light
复制标题
DOI：
10.1177/1045389x12440847
复制
发表时间：
2012-03
影响因子：
2.7
通讯作者：
Quantian Luo;L. Tong
中科院分区：
文献类型：
--
作者：
Quantian Luo;L. Tong
This article presents multifunctional behaviors of a Pb0.97La0.03(Zr0.52Ti0.48)O3 (3/52/48) wafer subjected to ultraviolet light illumination with a focus on its photoresistive effects. When this PLZT wafer that is spurted with indium tin oxide electrodes and then polarized through thickness is illuminated by ultraviolet light, its resistance increases rather than decreases as observed in conventional photoresistors made of semiconductors. Giant negative voltage and resistance are detected when light is switched off. The bending deformation caused by the photovoltaic and converse piezoelectric effects is examined and the photoinduced electrical field strength is further investigated. The electrical fields in light on–off states are studied. Hysteresis and memristive features of the indium tin oxide/PbLa(ZrTi)O3/indium tin oxide (ITO/PLZT/ITO) sample under repetitive light on–off operations are investigated.
