A fully electric field driven scalable magnetoelectric switching element
A fully electric field driven scalable magnetoelectric switching element
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DOI：
10.1063/1.5023003
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发表时间：
2018-04-30
影响因子：
4
通讯作者：
Victora, R. H.
中科院分区：
文献类型：
--
作者：
Ahmed, R.;Victora, R. H.
发展了一种Cr_2O_3基结构磁电效应的微磁学模拟技术。已经观察到，微观ME磁化率显着不同的实验测量值。在居里温度附近，两种磁化率之间的偏差变得更加突出，影响了器件在室温下的工作。已经提出了一种完全电场控制的ME开关元件，用于技术上感兴趣的密度：它在边界处采用量子力学交换，而不是传统开关方案中所需的施加磁场。建立温度依赖的物理参数后，开关性能进行了研究，为不同的温度，施加的电场，和Cr2O3横截面。已经发现，我们提出的使用量子力学交换有利于减少电场操作和增强可扩展性，同时保持可靠的热稳定性。出版社：AIP Publishing
A technique for micromagnetic simulation of the magnetoelectric (ME) effect in Cr2O3 based structures has been developed. It has been observed that the microscopic ME susceptibility differs significantly from the experimentally measured values. The deviation between the two susceptibilities becomes more prominent near the Curie temperature, affecting the operation of the device at room temperature. A fully electric field controlled ME switching element has been proposed for use at technologically interesting densities: it employs quantum mechanical exchange at the boundaries instead of the applied magnetic field needed in traditional switching schemes. After establishing temperature dependent physics-based parameters, switching performances have been studied for different temperatures, applied electric fields, and Cr2O3 cross-sections. It has been found that our proposed use of quantum mechanical exchange favors reduced electric field operation and enhanced scalability while retaining reliable thermal stability. Published by AIP Publishing.