Magnetization of the Fractional Quantum Hall States
Magnetization of the Fractional Quantum Hall States
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DOI：
10.1103/physrevlett.82.819
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发表时间：
1999-01
影响因子：
8.6
通讯作者：
I. Meinel;T. Hengstmann;D. Grundler;D. Heitmann;W. Wegscheider;M. Bichler
中科院分区：
文献类型：
--
作者：
I. Meinel;T. Hengstmann;D. Grundler;D. Heitmann;W. Wegscheider;M. Bichler
我们观察到源自单层 GaAs 异质结中分数量子霍尔态的电子磁性。这种磁化完全由电子-电子相互作用效应控制。这些研究是在 0.3 至 7 K 的温度下在门控高迁移率二维电子系统上进行的。我们观察到不同填充因子下磁矩的振荡，对于 ν 1，其持续高达 3.8 K。最突出的特征出现在填充因子 13、23、45 和 85 处。此外，观察到 ν=1 附近固有的强不对称磁化。
We observe electron magnetism originating from fractional quantum Hall states in single-layered GaAs heterojunctions. This magnetization is entirely governed by electron-electron interaction effects. The studies were performed at temperatures between 0.3 and 7 K on gated high-mobility two-dimensional electron systems. We observe oscillations in the magnetic moment at various fractional filling factors, both for ν 1, which persist up to 3.8 K. Most prominent features are found at filling factors 13, 23, 45, and 85. In addition, an intrinsic strongly asymmetric magnetization around ν=1 is observed.