Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single-heterostructure diode
Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single-heterostructure diode
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DOI：
10.1007/s00339-014-8804-6
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发表时间：
2015-03
期刊：
影响因子：
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通讯作者：
M. Morshed;Z. Zuo;Jian Huang;Jianlin Liu
中科院分区：
文献类型：
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作者：
M. Morshed;Z. Zuo;Jian Huang;Jianlin Liu
采用射频等离子体辅助分子束外延技术在蓝宝石衬底上生长了掺氮的镁锌锌薄膜和掺镓的氧化锌薄膜组成的异质结器件。电流-电压和光电流特性表明形成了p-n结。观察到了以356 nm为中心的随机激光行为。在注入电流为8 mA时，测得低阈值电流为6 mA，输出功率为34 nW。该薄膜含有柱状结构，具有很大的气隙，有助于光散射，以获得随机激光所需的增益。
A heterostructure device consisting of nitrogen-doped Mg0.12Zn0.88O and gallium-doped ZnO thin films was grown onc-plane sapphire substrate using RF plasma-assisted molecular beam epitaxy. Current–voltage and photocurrent characteristics indicate the formation of a p–n junction. Random lasing behavior with lasing modes centered at 356 nm was observed. A low-threshold current of 6 mA was determined, and an output power of 34 nW was measured at an injection current of 8 mA. The film contains columnar structures with much air gaps, which assist in light scattering to achieve necessary gain for random lasing.