Quantitative thermal imaging of single-walled carbon nanotube devices by scanning Joule expansion microscopy.
Quantitative thermal imaging of single-walled carbon nanotube devices by scanning Joule expansion microscopy.
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DOI：
10.1021/nn304083a
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发表时间：
2012-10
期刊：
影响因子：
17.1
通讯作者：
Xu Xie;K. L. Grosse;Jizhou Song;Chaofeng Lu;S. Dunham;Frank Du;A. Islam;Yuhang Li;Yihui Zhang-Y
中科院分区：
文献类型：
--
作者：
Xu Xie;K. L. Grosse;Jizhou Song;Chaofeng Lu;S. Dunham;Frank Du;A. Islam;Yuhang Li;Yihui Zhang-Y
单壁碳纳米管（SWNT）中的热发电和随后的热传输到周围环境中可以严重影响基于这些材料的电子和光电器件的设计，操作和可靠性。在这里，我们研究这样的热生成和传输特性，在完美对齐，水平阵列的单壁碳纳米管集成到晶体管结构。我们提出了在这些阵列中的单个单壁碳纳米管的局部测温的定量评估，使用扫描焦耳膨胀显微镜进行评估。在不同的外加电压下的测量揭示了电子行为，包括金属和半导体响应，直径或手性的空间变化，以及局部缺陷位点。通过在各种条件下对不同器件结构进行测量来验证的分析模型能够准确、定量地提取单个单壁碳纳米管水平的温度分布。在现有设备条件下，空间分辨率和温度精度分别达到了± 100nm和± 0.7K。
Electrical generation of heat in single-walled carbon nanotubes (SWNTs) and subsequent thermal transport into the surroundings can critically affect the design, operation, and reliability of electronic and optoelectronic devices based on these materials. Here we investigate such heat generation and transport characteristics in perfectly aligned, horizontal arrays of SWNTs integrated into transistor structures. We present quantitative assessments of local thermometry at individual SWNTs in these arrays, evaluated using scanning Joule expansion microscopy. Measurements at different applied voltages reveal electronic behaviors, including metallic and semiconducting responses, spatial variations in diameter or chirality, and localized defect sites. Analytical models, validated by measurements performed on different device structures at various conditions, enable accurate, quantitative extraction of temperature distributions at the level of individual SWNTs. Using current equipment, the spatial resolution and temperature precision are as good as ∼100 nm and ∼0.7 K, respectively.