In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes
In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes
复制标题
DOI：
10.1109/lpt.2004.843251
复制
发表时间：
2005-04-01
影响因子：
2.6
通讯作者：
Su, KC
中科院分区：
文献类型：
--
作者：
Yu, CL;Chen, CH;Su, KC
制作了具有凹进电极的InGaN金属-半导体-金属光电探测器。与传统的平面MSM-PD相比，发现具有凹陷电极的MSM-PD的光电流和光电流与暗电流的对比度都大得多。在外加偏压为5V，入射光波长为470 nm时，采用和不采用凹进电极的MSM-PD的响应度分别为0.144和0.038A/W。
InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated. Compared with the conventional planar MSM-PD, it was found that measured photocurrent and photocurrent-to-dark-current contrast ratio were both much larger for the MSM-PD with the recessed electrodes. With a 5-V applied bias and an incident light wavelength of 470 nm, it was found that measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without the recessed electrodes, respectively.