Novel High-Breakdown InGaAs/InAlAs pHEMTs for Radio Astronomy Applications
Novel High-Breakdown InGaAs/InAlAs pHEMTs for Radio Astronomy Applications
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用于射电天文学应用的新型高击穿 InGaAs/InAlAs pHEMT
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
D. George
中科院分区：
文献类型：
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作者：
A. Bouloukou;Ahmad Sohib;D. Kettle;J. Sly;M. Missous;D. George
通过优化InGaAs-InAlAs pHEMT的外延层轮廓，我们已经证明了从新的、低成本的、1 μ m栅器件结构在击穿电压、漏电流和输出电导方面改进的DC和RF性能。采用简单的制造工艺，不使用双凹槽或复合沟道结构。由于这种新的设计方法，在截止频率或增益上不会产生任何损失。通过利用高度优化和控制的处理技术，已经实现了跨晶片和不同工艺运行之间的器件特性的高度均匀性。这些器件的室温噪声特性在1.4 GHz时优于0.5 dB，显示出在低频射电天文波段室温下工作的低成本、超低噪声LNA的巨大潜力。
By optimising the epitaxial layer profile of InGaAs-InAlAs pHEMTs we have demonstrated improved DC and RF performance from a new, low-cost, 1 μm-gate device structure in terms of breakdown voltage, leakage current and output conductance. A simple fabrication process is employed that does not use double-recess or composite-channel structures. No penalty was incurred on cut-off frequency or gain due to this new design approach. High uniformity of device characteristics across wafers and between different process runs has been achieved by utilising highly optimised and controlled processing techniques. The room-temperature noise characteristics of these devices are better than 0.5 dB at 1.4 GHz and they show great potential for low-cost, ultra-low-noise LNAs operating at room temperature in the low-frequency radio astronomy band.