Magnetic anisotropy and reversal in epitaxial Fe/MgO(001) films
Magnetic anisotropy and reversal in epitaxial Fe/MgO(001) films
复制标题
DOI：
10.1103/physrevb.80.094416
复制
发表时间：
2009-09-01
影响因子：
3.7
通讯作者：
Van Haesendonck, Chris
中科院分区：
文献类型：
--
作者：
Zhan, Qing-feng;Vandezande, Stijn;Van Haesendonck, Chris
我们研究了具有四重面内磁各向异性和一个附加的单轴各向异性的Fe/MgO（001）薄膜的磁化反转，该单轴各向异性的取向和强度使用不同的生长几何形状和生长后处理来改变。以前采用的180度畴壁成核机制显然不能解释在Fe/MgO（001）膜中观察到的180度磁化反转。我们引入了一个反转机制与两个连续的畴壁成核一致预测的Fe/MgO（001）薄膜的开关领域的所有领域的取向与一组值的畴壁成核能和单轴各向异性。
We investigate the magnetization reversal in Fe/MgO(001) films with fourfold in-plane magnetic anisotropy and an additional uniaxial anisotropy whose orientation and strength are altered using different growth geometries and postgrowth treatments. The previously adopted mechanism of 180 degrees domain-wall nucleation clearly fails to explain the observed 180 degrees magnetization reversal in Fe/MgO(001) films. We introduce a reversal mechanism with two successive domain-wall nucleations to consistently predict the switching fields of Fe/MgO(001) films for all field orientations with one set of values for domain-wall nucleation energies and uniaxial anisotropy.