Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector
Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector
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DOI：
10.1088/1748-0221/12/01/c01011
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发表时间：
2017-01
影响因子：
1.3
通讯作者：
L. Zhang;M. Fu;Y. Zhang;W. Yan;M. Wang
中科院分区：
文献类型：
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作者：
L. Zhang;M. Fu;Y. Zhang;W. Yan;M. Wang
中国高能物理界提出的环形正负电子对撞机（CEPC）旨在精确测量希格斯粒子及其相互作用。包括硅内跟踪器（SIT）和前向跟踪器（FTD）在内的跟踪探测器在空间分辨率、功耗和读出速度方面对传感器技术提出了严格的要求。CMOS像素传感器（CPS）是一个有前途的候选人，以满足这些要求。本文对跟踪探测器的传感器优化进行了初步研究，以在保持必要的空间分辨率的同时获得高的收集效率。采用0.18 μ mCMOS图像传感器工艺对电荷收集进行了详细的研究。该工艺允许高电阻率外延层，导致电荷收集的显著改善，从而改善辐射耐受性。结合仿真结果，设计并制作了第一台探索性样机。该原型包括9个不同的像素阵列，其在像素间距、二极管尺寸和几何形状方面有所不同。原型的总面积为2 × 7.88 mm2。
The Circular Electron Positron Collider (CEPC) proposed by the Chinese high energy physics community is aiming to measure Higgs particles and their interactions precisely. The tracking detector including Silicon Inner Tracker (SIT) and Forward Tracking Disks (FTD) has driven stringent requirements on sensor technologies in term of spatial resolution, power consumption and readout speed. CMOS Pixel Sensor (CPS) is a promising candidate to approach these requirements. This paper presents the preliminary studies on the sensor optimization for tracking detector to achieve high collection efficiency while keeping necessary spatial resolution. Detailed studies have been performed on the charge collection using a 0.18 μm CMOS image sensor process. This process allows high resistivity epitaxial layer, leading to a significant improvement on the charge collection and therefore improving the radiation tolerance. Together with the simulation results, the first exploratory prototype has bee designed and fabricated. The prototype includes 9 different pixel arrays, which vary in terms of pixel pitch, diode size and geometry. The total area of the prototype amounts to 2 × 7.88 mm2.