Compound defects and thermoelectric properties in ternary CuAgSe-based materials
Compound defects and thermoelectric properties in ternary CuAgSe-based materials
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三元CuAgSe基材料的化合物缺陷和热电性能
DOI：
10.1039/c5ta02721g
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发表时间：
2015-06
影响因子：
11.9
通讯作者：
Lidong Chen
中科院分区：
文献类型：
--
作者：
Xiaobei Wang;Pengfei Qiu;Tiansong Zhang;Dudi Ren;Lihua Wu;Xun Shi;Jihui Yang;Lidong Chen
CuAgSe是一种窄带隙半导体材料，具有上级载流子迁移率和低晶格热导率，这对高热电性能非常重要。然而，它的电和热输运性质受到离子缺陷或组成非化学计量的极大影响，这导致在室温附近的热电优值较低。在这项工作中，我们系统地研究了复合缺陷的CuAgSe通过调整其起始化学成分。我们发现，它的相纯度是非常敏感的名义化学成分。在CuAgSe中仅允许少量的Ag缺乏以保持相纯度，而其他非化学计量组成导致杂质相。在300 K时，这些化合物缺陷或杂质相对热电性能的影响很小，但在高温下会发生很大变化。在CuAgSe中观察到单一类型的载流子导电，但在非化学计量样品中观察到明显的两种类型的载流子导电。这导致明显的n到p传导转变。因此，zT值在CuAgSe连续增加到0.6，在450 K，而非化学计量样品显示相当低的值，由于电子和空穴的贡献。高zT值的n型CuAgSe表明，它是一个有前途的热电材料在室温附近。
CuAgSe is a narrow band gap semiconducting material with superior carrier mobility and low lattice thermal conductivity, which are important and useful for high thermoelectric performance. However, its electrical and thermal transport properties are greatly affected by ionic deficiencies or compositional non-stoichiometry, which lead to a low thermoelectric figure of merit near room temperature. In this work, we systematically studied the compound defects in CuAgSe by tuning its starting chemical composition. We found that its phase purity is very sensitive to nominal chemical compositions. Only a small amount of Ag deficiency is allowed in CuAgSe to maintain phase purity, while the other non-stoichiometric compositions lead to impurity phases. Thermoelectric properties are weakly affected by these compound defects or impurity phases at 300 K, but greatly change at high temperatures. A single type carrier conduction is observed in CuAgSe, but a noticeable two-type carrier conduction is observed in the non-stoichiometric samples. This leads to an evident n to p conduction transition. Consequently, zT values in CuAgSe continuously increase to 0.6 at 450 K while the non-stoichiometric samples display considerably low values due to the contribution from both electrons and holes. The high zT value in n-type CuAgSe suggests that it is a promising thermoelectric material near room temperature.
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影响因子：
41.2
作者：
Liu, Huili;Shi, Xun;Snyder, G. Jeffrey
通讯作者：
Snyder, G. Jeffrey
影响因子：
32.5
作者：
Y. Pei;Haijun Wu;J. Sui;Jing Li;D. Bérardan;C. Barreteau;Lin Pan;N. Dragoe;Weishu Liu;
通讯作者：
Y. Pei;Haijun Wu;J. Sui;Jing Li;D. Bérardan;C. Barreteau;Lin Pan;N. Dragoe;Weishu Liu;
DOI：
10.1140/epjb/e2006-00253-3
发表时间：
2006-06
期刊：
The European Physical Journal B - Condensed Matter and Complex Systems
影响因子：
--
作者：
D. Trots;A. Skomorokhov;M. Knapp;H. Fuess,
通讯作者：
D. Trots;A. Skomorokhov;M. Knapp;H. Fuess,
影响因子：
4.6
作者：
Jae-Yeol Hwang;Hyeona Mun;Sang Il Kim;K. Lee;Jungeun Kim;Kyu Hyoung Lee;Sung Wng Kim
通讯作者：
Jae-Yeol Hwang;Hyeona Mun;Sang Il Kim;K. Lee;Jungeun Kim;Kyu Hyoung Lee;Sung Wng Kim
含镓热电方钴矿中的电荷补偿化合物缺陷
影响因子：
19
作者：
Qiu, Yuting;Xi, Lili;Snyder, G. Jeffrey
通讯作者：
Snyder, G. Jeffrey