Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy
Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy
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DOI：
10.1063/1.3534785
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发表时间：
2011-01-03
影响因子：
4
通讯作者：
Harris, James S.
中科院分区：
文献类型：
--
作者：
Huo, Yijie;Lin, Hai;Harris, James S.
在（100）GaAs衬底上，用分子束外延方法生长了高应变Ge层，并采用了阶梯渐变的InxGa 1-xAs缓冲层。这些层具有高达2.33%的双轴拉伸应变，具有
Highly tensile-strained layers of Ge were grown via molecular beam epitaxy using step-graded InxGa1-xAs buffer layers on (100) GaAs. These layers have biaxial tensile-strain of up to 2.33%, have surface roughness of