High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As HEMT fabricated on [411]A-oriented InP substrate
High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As HEMT fabricated on [411]A-oriented InP substrate
复制标题
在 [411]A 取向 InP 上制造的 195 nm 栅极 In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As HEMT 在 16 K 时观察到 2.25 S/mm 的高跨导
DOI：
10.1109/led.2005.851234
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发表时间：
2005
影响因子：
4.9
通讯作者：
S. Hiyamizu
中科院分区：
文献类型：
--
作者：
I. Watanabe;K. Shinohara;T. Kitada;S. Shimomura;Y. Yamashita;A. Endoh;T. Mimura;T. Matsui;S. Hiyamizu
在[411]A取向的InP衬底上制备的195 nm栅型In/sub0.75/Ga/sub0.25/As/In/sub0.52/Al/sub0.48/As赝型高电子迁移率晶体管(PHEMT)在16K下获得了最大跨导(g/subm/mm)2.25 S/mm，这是迄今报道的HEMT的最高值。这种PHEMT在16K时的截止频率(f/subT/)也比它的室温值(245 GHz)高得多。在16K时，g/subm/和f/subT/的显著提高可以归因于栅下区域较高的饱和速度，这不仅是由于抑制了声子散射，也是由于抑制了“(411)A超平坦InGaAs/InAlAs界面”(在晶片大小的区域上有效地原子平坦的异质界面)引起的界面粗糙散射。
We achieved a maximum transconductance (g/sub m/) of 2.25 S/mm at 16 K for a 195-nm-gate In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As pseudomorphic high-electron mobility transistor (PHEMT) fabricated on a [411]A-oriented InP substrate, which is the highest value ever reported for HEMTs. This PHEMT also showed a much enhanced cutoff frequency (f/sub T/) of 310 GHz at 16 K, compared with its room temperature value (245 GHz). The significantly enhanced g/sub m/ and f/sub T/ at 16 K can be attributed to the higher saturation velocity in the region "under the gate," which is caused not only by suppressing the phonon scattering, but also by suppressing the interface roughness scattering due to the "(411)A super-flat InGaAs/InAlAs interfaces" (effectively atomically flat heterointerfaces over a wafer-size area).