Effect of Co doping on chemosorbed oxygen accumulation and gas response of SnO2 under dynamic program cooling
Effect of Co doping on chemosorbed oxygen accumulation and gas response of SnO2 under dynamic program cooling
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Co掺杂对动态程序冷却下SnO2化学吸附氧积累和气体响应的影响
DOI：
10.1016/j.snb.2021.129810
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发表时间：
2021-04
期刊：
影响因子：
--
通讯作者：
Zhang Shunping
中科院分区：
文献类型：
--
作者：
Zhang Jiangtao;Xie Feng;Yang Li;Guo Shenghui;Xiong Youhui;Zhang Shunping
During the process of metal oxide semiconductors (MOS) gas sensing, the chemisorbed oxygen on the surface plays a significant important role, which determines the surface reactivity and controls the film conductivity. Therefore, it is necessary to improve the amount of chemisorbed oxygen on MOS surface. In this paper, the effect of doping on the accumulation of chemosorbed oxygen on SnO2surface was studied. SnO2, Co-SnO2and Nb-SnO2were successfully synthesized via nonaqueous sol-gel method to study the effect of acceptor doping and donor doping on accumulation of chemosorbed oxygen and gas response. And dynamic program cooling (DPC) was also carried out in different concentrations of acetone and different gases respectively to obtain the R-T curve and gas response. The results showed that the Co doped SnO2 obviously improved the accumulation of chemosorbed oxygen and dynamic gas response, while the Nb doping has little improvement. The reason of these results was also analyzed by band theory in this paper.
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影响因子：
4
作者：
Shurong Wang;Yingqiang Zhao;Jing Huang;Yan Wang;Fanhong Kong;Shihua Wu;Shoumin Zhang;Weiping Huang
通讯作者：
Shurong Wang;Yingqiang Zhao;Jing Huang;Yan Wang;Fanhong Kong;Shihua Wu;Shoumin Zhang;Weiping Huang
Pd掺杂SnO2厚膜的CO传感特性及机理
影响因子：
6.7
作者：
Chen, Yanping;Qin, Hongwei;Hu, Jifan
通讯作者：
Hu, Jifan
DOI：
10.1016/0250-6874(88)80062-3
发表时间：
1988-06-01
期刊：
SENSORS AND ACTUATORS
影响因子：
--
作者：
LANTTO, V;ROMPPAINEN, P;LEPPAVUORI, S
通讯作者：
LEPPAVUORI, S
影响因子：
3.9
作者：
WINDISCHMANN, H;MARK, P
通讯作者：
MARK, P
DOI：
10.1116/1.570389
发表时间：
1980-01-01
期刊：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
影响因子：
--
作者：
CHANG, SC
通讯作者：
CHANG, SC