Nonlinear charging effect of quantum dots in a p-i-n diode
Nonlinear charging effect of quantum dots in a p-i-n diode
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p-i-n 二极管中量子点的非线性充电效应
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
M. Henini
中科院分区：
文献类型：
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作者：
G. Kiesslich;A. Wacker;E. Schöll;S. Vitusevich;A. Belyaev;S. Danylyuk;A. Förster;N. Klein;M. Henini
研究了流过 $pensuremath{-}iensuremath{-}n$ 二极管的电流，该二极管在本征区包含一层自组装 InAs 量子点。在平带区域以下的微分电导中观察到一系列峰值，我们将其归因于量子点和润湿层状态中的电子隧道效应，结合了载流子复合和载流子弛豫效应。基于主方程模型对这种现象进行了数值研究。讨论了单个量子点充电的可观察性标准。一个关键点是库仑屏蔽的存在，否则长程点间相互作用会抹掉能级谱。
The current through a $pensuremath{-}iensuremath{-}n$ diode containing a layer of self-assembled InAs quantum dots in the intrinsic region is investigated. A series of peaks is observed in the differential conductance below the flat band regime which we attribute to electron tunneling in the quantum dot and wetting layer states, combining the carrier recombination and the carrier relaxation effects. This phenomenon is investigated numerically on the basis of a master equation model. Criteria for the observability of the charging of individual quantum dots are discussed. A key point is the presence of Coulomb screening as otherwise the long-range interdot interactions smear out the energy level spectrum.