High-speed near-field photolithography at 16.85 nm linewidth with linearly polarized illumination.
High-speed near-field photolithography at 16.85 nm linewidth with linearly polarized illumination.
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DOI：
10.1364/oe.25.017571
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发表时间：
2017-07
期刊：
影响因子：
3.8
通讯作者：
Jiaxin Ji;Y. Meng;Yueqiang Hu;Jian Xu;Shayu Li;Guoqiang Yang
中科院分区：
文献类型：
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作者：
Jiaxin Ji;Y. Meng;Yueqiang Hu;Jian Xu;Shayu Li;Guoqiang Yang
研究了在具有中心柱的同心环中，在具有特定入射角的线偏振照明下的等离子体聚焦。当线偏振光束的入射角在偏离法线方向6 ° ~ 15 °范围内变化时，焦斑尺寸稳定在37 nm，小于相同激发条件下径向偏振光束的焦斑尺寸45 nm。结合这与高速近场光刻技术，我们展示了一个等离子体光刻与16.85 nm线宽的有机和无机光刻胶在大规模的扫描速度高达11.3米/秒。这种倾斜的线偏振照明是很容易实现的近场光刻系统的原型，它开辟了一个新的成本效益的方法，对下一代光刻纳米制造。
Plasmonic focusing was investigated in concentric rings with a central pillar under linearly polarized illumination with a specific incident angle. When changing the incident angle of linearly polarized beam between 6 and 15 degree away from the normal direction, the focal spot size can keep a steady value of 37 nm, smaller than the focal spot with the radially polarized beam at the same excited condition, 45 nm. Combining this with the high-speed near-field photolithography technology, we demonstrated a plasmonic lithography with 16.85 nm linewidth on both organic and inorganic photo-resists in large scale at scanning speeds up to 11.3 m/s. This inclined linearly polarized illumination is easy to realize in a prototype of near-field photolithography system, and it opens a new cost effective approach towards the next generation lithography for nano-manufacturing.