Insight into segregation sites for oxygen impurities at grain boundaries in silicon
Insight into segregation sites for oxygen impurities at grain boundaries in silicon
复制标题
DOI：
10.35848/1882-0786/abe80d
复制
发表时间：
2021-04
影响因子：
2.3
通讯作者：
Y. Ohno;Jie Ren;Shingo Tanaka;M. Kohyama;K. Inoue;Y. Shimizu;Y. Nagai;H. Yoshida
中科院分区：
文献类型：
--
作者：
Y. Ohno;Jie Ren;Shingo Tanaka;M. Kohyama;K. Inoue;Y. Shimizu;Y. Nagai;H. Yoshida
采用原子探针层析成像技术结合聚焦离子束（FIB）技术，在-150 °C温度下，以小于0.5 nm的高空间分辨率分析了直拉硅单晶中偏析在119 {114}晶界的氧原子的三维分布。该分析揭示了氧原子在GB平面上的2.5nm范围内的偏析，与使用常规FIB获得的先前报道相比，该范围窄得多。的氧浓度分布准确地反映了偏析的网站，存在于键中心的网站下的拉伸应力超过2 GPa，计算从头局部应力计算的分布。
The three-dimensional distribution of oxygen atoms segregated at Σ9{114} grain boundaries (GBs) in Czochralski-grown silicon ingots is analyzed within a high spatial resolution of less than 0.5 nm by atom probe tomography combined with a focused ion beam (FIB) operated at −150 °C. The analysis reveals a segregation of oxygen atoms within a range of 2.5 nm across the GB plane, which is much narrower in comparison with the previous reports obtained using a conventional FIB. The oxygen concentration profile accurately reflects the distribution of the segregation sites, which exist at bond-centered sites under tensile stresses above 2 GPa, as calculated by ab initio local stress calculations.