Parametric Analysis of Spin-Polarized VCSELs
Parametric Analysis of Spin-Polarized VCSELs
复制标题
自旋偏振 VCSEL 的参数分析
DOI：
10.1109/jqe.2009.2013107
复制
发表时间：
2009
影响因子：
2.5
通讯作者：
M. Adams
中科院分区：
文献类型：
--
作者：
D. Alexandropoulos;M. Adams
采用自旋反转模型求解稳态速率方程的有效算法，计算了自旋注入垂直腔面发射激光器（VCSEL）。研究了自旋弛豫、双折射、电子和光子寿命、线宽因子以及泵浦的大小和椭圆率等对系统的影响。在回顾了已发表的VCSEL半导体自旋弛豫速率的值后，计算了Elliot-Yafet工艺下GaInNAs量子威尔斯阱中自旋弛豫时间对N含量和阱宽的依赖性。模拟结果与实验结果吻合较好，并用于自旋注入GaInNAs垂直腔面发射激光器的模拟，以确定偏振控制对阱宽的依赖关系。
Calculations of spin-injected vertical-cavity surface-emitting lasers (VCSELs) are presented using an efficient algorithm for solution of the steady-state rate equations in the spin-flip model. The effects of spin relaxation, birefringence, electron and photon lifetimes, linewidth factor, and the magnitude and ellipticity of the pumping are investigated. After a review of published values for spin relaxation rates in semiconductors of interest for VCSELs, the dependence of spin relaxation times in GaInNAs quantum wells on N content and well width is calculated for the Elliot-Yafet process. The results, which show good agreement with experiment, are used in simulations of spin-injected GaInNAs VCSELs to determine the dependence of polarization control on well width.