MEMRISTIVE DEVICES AND SYSTEMS
MEMRISTIVE DEVICES AND SYSTEMS
复制标题
DOI：
10.1109/proc.1976.10092
复制
发表时间：
1976-01-01
影响因子：
20.6
通讯作者：
KANG, SM
中科院分区：
文献类型：
--
作者：
CHUA, LO;KANG, SM
将记忆阻器--最近提出的一种电路元件--广泛推广到一类有趣的称为记忆系统的非线性动力系统中。这些系统在某种意义上是非常规的，虽然它们的行为像电阻装置，但它们可以被赋予相当奇特的各种动态特性。虽然它们具有记忆性，并表现出小信号的感应或电容效应，但它们不能进行能量放电，并且它们在输入和输出波形之间没有相移。这种过零性质产生了一个总是通过原点的李萨如图形。记忆系统具有滞后性，其李萨如曲线随激励频率的变化而变化。在很低的频率下，记忆系统与非线性电阻很难区分，而在极高的频率下，它们会退化为线性电阻。这些异常特性误导和阻碍了许多记忆器件和系统的识别--包括热敏电阻、霍奇金-赫胥黎膜电路模型和放电管。推导了记忆系统的一般性质，给出了一个典型的动力系统模型，并给出了辨识模型参数和函数的显式算法。
A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics. While possessing memory and exhibiting small-signal inductive or capacitive effects, they are incapable of energy discharge and they introduce no phase shift between the input and output waveforms. This zero-crossing property gives rise to a Lissajous figure which always passes through the origin. Memristive systems are hysteretic in the sense that their Lissajous figures vary with the excitation frequency. At very low frequencies, memristive systems are indistinguishable from nonlinear resistors while at extremely high frequencies, they reduce to linear resistors. These anomalous properties have misled and prevented the identification of many memristive devices and systems-including the thermistor, the Hodgkin-Huxley membrane circuit model, and the discharge tubes. Generic properties of memristive systems are derived and a canonic dynamical system model is presented along with an explicit algorithm for identifying the model parameters and functions.