Pulmonary clearance and toxicity of respirable gallium arsenide particulates intratracheally instilled into rats.

Pulmonary clearance and toxicity of respirable gallium arsenide particulates intratracheally instilled into rats.
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大鼠气管内滴注可吸入砷化镓颗粒的肺清除率和毒性。

DOI:
10.1080/15298668791385372
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发表时间:
1987
期刊:
American Industrial Hygiene Association journal
影响因子:
--
通讯作者:
Carter,DE
Carter,DE
中科院分区:
--
文献类型:
--
作者:
Webb,DR;Wilson,SE;Carter,DE

文献摘要

被引文献

相似文献

砷化镓(GaAs)是一种金属间化合物,被认为对职业性接触其粉尘的工人具有潜在的毒理学风险。先前的结果表明,大鼠经气管内滴注一部分GaAs颗粒(平均计数直径为8.30 µm,平均体积直径为12.67 µm)后,出现了全身性砷中毒、肺部炎症和肺细胞增生的体征。本研究的结果证实了这些发现,也表明,一个显着较小的部分砷化镓是一个相对更严重的肺毒物。将颗粒平均计数和平均体积直径分别降低至1.63 μm和5.82 μm,增加了GaAs的体内溶解速率,增加了先前与GaAs暴露相关的肺部病变的严重程度,并导致受影响肺组织中独特的病理学后遗症。尽管肺组织的组织学检查显示轻度纤维化反应,但肺4-羟脯氨酸含量分析显示的肺纤维化不具有统计学显著性。这些结果提供了额外的证据,肺部暴露于可吸入砷化镓颗粒是一个潜在的健康危害,在半导体行业。
Gallium arsenide (GaAs) is an intermetallic compound that is recognized as a potential toxicological risk to workers occupationally exposed to its dust. Previous results have shown that rats intratracheally instilled with a fraction of GaAs particulates, characterized with a mean count diameter of 8.30 µm and a mean volume diameter of 12.67 µm, developed signs of systemic arsenic intoxication, pulmonary inflammation, and pneumocyte hyperplasia. The results of the present study confirm these findings and also show that a significantly smaller fraction of GaAs is a relatively more severe pneumotoxicant. Decreasing the particle mean count and mean volume diameter to 1.63 µm and 5.82 µm, respectively, increased thein vivodissolution rate of GaAs, increased the severity of pulmonary lesions previously associated with GaAs exposure, and resulted in unique pathological sequalae in affected lung tissue. Pulmonary fibrosis, as indicated by analysis of lung 4-hydroxyproline content, was not considered statistically significant although histological examination of lung tissue revealed a mild fibrotic response. These results provide additional evidence that pulmonary exposure to respirable GaAs particulates is a potential health hazard in the semiconductor industry.