Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF(2) as a reaction gas.
Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF(2) as a reaction gas.
复制标题
DOI：
10.1107/s0909049509045658
复制
发表时间：
2010-01
影响因子：
2.5
通讯作者：
Urisu T
中科院分区：
文献类型：
--
作者：
Chiang TY;Makimura T;He T;Torii S;Yoshida T;Tero R;Wang C;Urisu T
采用XeF 2作为刻蚀气体，对硅弹性体聚二甲基硅氧烷进行同步辐射刻蚀。采用同步辐射（SR）对硅弹性体聚二甲基硅氧烷（PDMS）进行了刻蚀，刻蚀气体为XeF 2。利用差动泵浦和两个抛物面聚焦镜构成的刻蚀系统进行刻蚀。在XeF 2气流中，硅橡胶薄膜被SR辐照有效地刻蚀，刻蚀过程具有区域选择性和各向异性。在0.2-0.4 μ m的XeF 2气体压力下，很容易获得 40-50 µm（10 min）−1的极高蚀刻速率。 这表明，使用XeF 2气体的SR蚀刻为厚PDMS膜提供了一种新的微加工技术，这可以打开新的应用，例如形成三维微流体回路。
Synchrotron-radiation-stimulated etching of silicon elastomer polydimethylsiloxane using XeF2 as an etching gas is demonstrated. The synchrotron radiation (SR) stimulated etching of silicon elastomer polydimethylsiloxane (PDMS) using XeF2 as an etching gas has been demonstrated. An etching system with differential pumps and two parabolic focusing mirrors was constructed to perform the etching. The PDMS was found to be effectively etched by the SR irradiation under the XeF2 gas flow, and the etching process was area-selective and anisotropic. An extremely high etching rate of 40–50 µm (10 min)−1 was easily obtained at an XeF2 gas pressure of 0.2–0.4 torr. This suggests that SR etching using XeF2 gas provides a new microfabrication technology for thick PDMS membranes, which can open new applications such as the formation of three-dimensional microfluidic circuits.