Symmetric U-Shaped Gate Tunnel Field-Effect Transistor
Symmetric U-Shaped Gate Tunnel Field-Effect Transistor
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对称 U 形栅极隧道场效应晶体管
DOI：
10.1109/ted.2017.2647809
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发表时间：
2017-03-01
影响因子：
3.1
通讯作者：
Wang, Xing
中科院分区：
文献类型：
--
作者：
Chen, Shupeng;Wang, Shulong;Wang, Xing
提出并通过 Silvaco Atlas 仿真研究了一种新型异质结对称 U 形栅极隧道 FET (SUTFET)。 SUTFET中的U形栅极可以扩大隧道结的面积，有利于实现更小的器件面积。受益于线带间隧道过程和对称结构设计，双向电流流动 (<inline-formula> <tex-math notation="LaTeX">${I}_{\mathrm{ON}} = 13.5 \mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">${I}_{\mathrm{OFF}} = 3.1$ </tex-math></inline-formula> pA/<inline-formula> <tex-math notation="LaTeX">${\mu}\text{m}$ </tex-math></inline-formula> 位于 <inline-formula> <tex-math notation="LaTeX">${V}_{\mathsf {GS}} ={V}_{\mathsf {DS}} = 0.5$ </tex-math></inline-formula> V) 具有亚阈值斜率的陡峭切换功能 (SS <inline-formula> <tex-math notation="LaTeX">$=15.2$ </tex-math></inline-formula> mV/decade at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathsf {GS}} = 0.05$ </tex-math></inline-formula> V 和平均 SS <inline-formula> <tex-math notation="LaTeX">$=37.2$ </tex-math></inline-formula> mV/decade 从 0 V < V<sub>GS</sub> < 0.05 V）已实现。研究了掺杂浓度和几何尺寸对器件性能的影响，以制定 SUTFET 设计指南。 SUTFET 相当好的性能使其对于超低功耗应用非常有吸引力。
A novel heterojunction symmetric U-shaped gate tunnel FET (SUTFET) is proposed and investigated by Silvaco Atlas simulation. The U-shaped gate in the SUTFET can enlarge the area of the tunneling junction and facilitate the implementation of a smaller device area. Benefit from the line band-to-band tunneling process and symmetric structure design, bidirectional current flows (<inline-formula> <tex-math notation="LaTeX">${I}_{\mathrm{ON}} = 13.5 \mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">${I}_{\mathrm{OFF}} = 3.1$ </tex-math></inline-formula> pA/<inline-formula> <tex-math notation="LaTeX">${\mu}\text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">${V}_{\mathsf {GS}} ={V}_{\mathsf {DS}} = 0.5$ </tex-math></inline-formula> V) with the steep-switching feature of subthreshold slope (SS <inline-formula> <tex-math notation="LaTeX">$=15.2$ </tex-math></inline-formula> mV/decade at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathsf {GS}} = 0.05$ </tex-math></inline-formula> V and average SS <inline-formula> <tex-math notation="LaTeX">$=37.2$ </tex-math></inline-formula> mV/decade from 0 V < V<sub>GS</sub> < 0.05 V) are implemented. The effects of doping concentration and geometric dimensions on the device performance are investigated in order to create the SUTFET design guideline. The considerable good performance of the SUTFET makes it very attractive for ultralow-power applications.