Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating.
Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating.
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DOI：
10.1038/ncomms10671
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发表时间：
2016-02-12
影响因子：
16.6
通讯作者：
Reed EJ
中科院分区：
文献类型：
--
作者：
Li Y;Duerloo KA;Wauson K;Reed EJ
通过原子结构的变化来动态控制电导率和光学性质在信息存储中具有重要的技术意义。能量消耗的考虑提供了在装置中采用薄材料的驱动力。单层过渡金属二硫属化物是几乎原子级薄的材料，其可以以多种晶体结构存在，每种晶体结构具有不同的电学性质。通过开发新的基于密度泛函的方法，我们发现，静电门控设备配置有可能驱动结构的半金属相变在一些单层过渡金属二硫族化物。在这里，我们表明，在单层MoTe2的半导体到半金属相变可以驱动由几伏的栅极电压与适当的选择的电介质。我们发现，过渡栅电压可以通过合金化任意降低，例如，对于MoxW1−xTe2单层。我们的研究结果确定了一种新的物理机制，不存在于体材料中，动态控制二维材料的结构相变，使相变电子器件的潜在应用。 通过改变原子结构来控制电导率和光学性质在信息存储中具有重要的技术意义。在这里，Li等人表明，静电门控有可能驱动一些单层过渡金属二硫属化物中的结构性半导体到半金属相变。
Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the transition gate voltage can be reduced arbitrarily by alloying, for example, for MoxW1−xTe2 monolayers. Our findings identify a new physical mechanism, not existing in bulk materials, to dynamically control structural phase transitions in two-dimensional materials, enabling potential applications in phase-change electronic devices. Control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Here, Li et al. show that electrostatic gating has the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides.