Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
复制标题
自限选区金属有机气相外延形成量子点结构的新方法
DOI：
10.1143/jjap.34.4387
复制
发表时间：
1995
影响因子：
1.5
通讯作者：
H. Hasegawa
中科院分区：
文献类型：
--
作者：
K. Kumakura;Kazuaki Nakakoshi;J. Motohisa;T. Fukui;H. Hasegawa
我们使用选择性区域金属有机气相外延 (MOVPE) 制造了 AlGaAs/GaAs 量子点结构。首先，在具有方形开口的SiN x 掩模(001) GaAs上形成具有四重对称{011}面侧壁的GaAs金字塔结构。一旦金字塔结构完全形成，金字塔的顶部或侧壁就不再发生生长。此外，使用扫描电子显微镜（SEM）和原子力显微镜（AFM）观察到的顶部区域的形状和宽度显示出高度均匀性。这表明发生了自限性生长。接下来，利用这些均匀的金字塔，在不同的生长条件下在金字塔顶部生长出砷化镓量子点。从均匀的量子点观察到清晰的光致发光 (PL) 光谱。
We have fabricated AlGaAs/GaAs quantum dot structures using selective area metalorganic vapor phase epitaxy (MOVPE). First, GaAs pyramidal structures with fourfold symmetric {011} facet sidewalls are formed on SiN x -masked (001) GaAs with square openings. Once the pyramidal structures were completely formed, no growth occurs on the top or sidewalls of the pyramids. Furthermore, the shape and width of the top area observed using a scanning electron microscope (SEM) and an atomic force microscope (AFM) is shown to be highly uniform. This indicates that self-limited growth occurs. Next, using these uniform pyramids, GaAs quantum dots are overgrown on top of the pyramids under different growth conditions. Sharp photoluminescence (PL) spectra are observed from uniform quantum dots.