Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films
Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films
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DOI：
10.1016/j.tsf.2005.07.172
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发表时间：
2006-04-20
期刊：
影响因子：
2.1
通讯作者：
Matsumura, H
中科院分区：
文献类型：
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作者：
Masuda, A;Umemoto, H;Matsumura, H
综述了催化化学气相沉积(Cat-CVD)法制备的氮化硅(SiNx)薄膜在涂层、钝化和绝缘膜等方面的应用。Cat-CVD制备的SiNx薄膜的特点是致密(低氢含量)、低湿法刻蚀速率、低氧或低水蒸气透过率，即使在低于300℃的低温和低应力下也是如此。因此，Cat-CVD法制备的SiNx薄膜非常适合作为电子器件、机械零件和塑料薄膜的涂层和钝化膜。当然，用Cat-CVD法制备的SiNx薄膜也可用作超大规模集成电路(ULSI)和薄膜晶体管(TFT)的绝缘膜。介绍了这些不同的应用，总结了SiNx薄膜的基本性质，并对为什么在低温下仍能获得如此致密的薄膜给出了可能的解释。(C)2005 Elsevier B.V.保留所有权利。
Various applications of silicon nitride (SiNx) films prepared by catalytic chemical vapor deposition (Cat-CVD) as coating, passivation and insulating films are reviewed. Characteristic features of SiNx films by Cat-CVD are dense (low hydrogen content), low wet-etch rate, low oxygen or water-vapor transmission rate even when prepared at low temperatures below 300 degrees C and low stress. Therefore, SiNx films prepared by Cat-CVD are suitable as coating and passivation films for electronic devices, mechanical parts and plastic films. SiNx films prepared by Cat-CVD are, of course, also applicable as insulating films used in ultralarge-scale integrated circuits (ULSIs) and thin-film transistors (TFTs). These various applications are introduced, along with a summary of the fundamental properties of the SiNx films and a possible explanation as to why such dense films are obtained even at low temperatures. (c) 2005 Elsevier B.V. All rights reserved.