Epitaxial Pb(Zr,Ti)O3 Capacitors on Si by Liquid Delivery Metalorganic Chemical Vapor Deposition
Epitaxial Pb(Zr,Ti)O3 Capacitors on Si by Liquid Delivery Metalorganic Chemical Vapor Deposition
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液体输送金属有机化学气相沉积法在 Si 上外延 Pb(Zr,Ti)O3 电容器
DOI：
10.1007/s10832-005-6582-4
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发表时间：
2005
影响因子：
1.7
通讯作者：
K. Eisenbeiser
中科院分区：
文献类型：
--
作者：
S. Yang;B. Liu;J. Ouyang;V. Nagarajan;V. N. Kulkarni;R. Ramesh;J. Kidder;R. Droopad;K. Eisenbeiser
以srtio3薄层（20nm）为模板，采用液相金属有机化学气相沉积技术在硅晶片上成功制备了La0.5Sr0.5CoO3/Pb(ZrxTi1−x)O3/La0.5Sr0.5CoO3电容器。采用Zr(dmhd)4in四氢呋喃作为Zr前驱体，与Pb(thd)2和Ti(OiPr)2(thd)2前驱体热行为相容。利用卢瑟福后向散射（RBS）技术系统地研究了铁电薄膜组成对前驱体掺量和生长温度的依赖性。研究了该材料在接近形态取向相边界区域（Pb(Zr0.5Ti0.5)O3）的铁电和压电性能，并将其应用于非易失性铁电随机存取存储器和微机电系统（MEMS）中。这些电容器显示出理想的铁电性能，这证明了这种方法在基础研究和潜在应用方面都是非常有前途的。给出了自发极化（Ps）和压电系数（d33）随Ti/(Zr + Ti)比值的变化规律，并与理论值进行了比较。
La0.5Sr0.5CoO3/Pb(ZrxTi1−x)O3/La0.5Sr0.5CoO3capacitors have been successfully fabricated by liquid delivery metalorganic chemical vapor deposition on Si wafers using SrTiO3thin layer (20 nm) as a template. Zr(dmhd)4in tetrahydrofuran was used as Zr precursor for compatible thermal behavior with Pb(thd)2and Ti(OiPr)2(thd)2precursors. The dependence of the ferroelectric film composition on the precursor mixing ratio and growth temperature has been systematically studied by Rutherford Backscattering (RBS). Ferroelectric and piezoelectric properties at the composition close to morphotropic phase boundary region (Pb(Zr0.5Ti0.5)O3) have been investigated for application in nonvolatile ferroelectric random access memories and microelectromechanical system (MEMS). These capacitors show desirable ferroelectric properties, which proves that this approach is very promising for both fundamental study and potential applications. The changes of spontaneous polarization (Ps) and piezoelectric coefficient (d33) with Ti/(Zr + Ti) ratio are also presented and compared with theoretical values.