Thermodynamic processes on a semiconductor surface during in-situ multi-beam laser interference patterning
Thermodynamic processes on a semiconductor surface during in-situ multi-beam laser interference patterning
复制标题
原位多光束激光干涉图案化过程中半导体表面的热力学过程
DOI：
10.1049/iet-opt.2018.5028
复制
发表时间：
2019
影响因子：
1.6
通讯作者：
Hopkinson Mark
中科院分区：
文献类型：
--
作者：
Wang Yun Ran;Jin Chao Yuan;Ho Chih Hua;Chen Si;Francis Henry;Hopkinson Mark
激光干涉已被广泛用于生产一维光栅，最近已显示出二维图案化的巨大潜力。在这项研究中，作者通过模拟研究了其在材料生长过程中原位图案化的应用。为了理解这种潜力，重要的是研究激光与物质相互作用产生的表面过程，这对所产生的生长机制有关键影响。在这项工作中，强度分布和激光-半导体相互作用产生的四光束干涉图案进行了分析，通过数值模拟。特别是，作者推导出时间和空间相关的热分布沿着热诱导解吸和表面扩散。结果提供了对光诱导热分布的重要理解，并表明表面温度和表面吸附原子动力学可以通过光热反应引起的多束脉冲激光干涉图案化来控制。该方法具有作为半导体材料表面快速精确纳米结构化的原位技术的潜力。
Laser interference has been widely used to produce one‐dimensional gratings and more recently has shown great potential for two‐dimensional patterning. In this study, the authors examine by simulation, its application to in‐situ patterning during materials growth. To understand the potential, it is important to study the surface processes resulting from the laser–matter interaction, which have a key influence on the resulting growth mechanisms. In this work, the intensity distribution and the laser–semiconductor interaction resulting from four‐beam interference patterns are analysed by numerical simulations. In particular, the authors derive the time and spatially dependent thermal distribution along with the thermal‐induced desorption and surface diffusion. The results provide a crucial understanding of the light‐induced thermal profile and show that the surface temperature and the surface adatom kinetics can be controlled by multi‐beam pulsed laser interference patterning due to photothermal reactions. The approach has potential as an in‐situ technique for the fast and precise nanostructuring of semiconductor material surfaces.