C.-H.Lee: "Crystallographic Structure and Contact Resistance of Self-Aligned Nitrided Barrier Layers on TiSi2 for Fully Self-Aligned Metallization MOSFETs" Abstracts of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998, Colorad
C.-H.Lee: "Crystallographic Structure and Contact Resistance of Self-Aligned Nitrided Barrier Layers on TiSi2 for Fully Self-Aligned Metallization MOSFETs" Abstracts of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998, Colorad
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C.-H.Lee：“用于完全自对准金属化 MOSFET 的 TiSi2 上自对准氮化阻挡层的晶体结构和接触电阻”1998 年 ULSI 应用的先进金属化和互连系统摘要，Colorad
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