Eu‐doped KCl phosphor crystals as a storage material for two‐dimensional ultraviolet‐ray or x‐ray imaging sensors
Eu‐doped KCl phosphor crystals as a storage material for two‐dimensional ultraviolet‐ray or x‐ray imaging sensors
复制标题
Eu掺杂KCl荧光粉晶体作为二维紫外线或X射线成像传感器的存储材料
DOI：
10.1063/1.356621
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发表时间：
1994
影响因子：
3.2
通讯作者：
N. Takeuchi
中科院分区：
文献类型：
--
作者：
H. Nanto;Fumitaka Endo;Y. Hirai;S. Nasu;S. Taniguchi;N. Takeuchi
在紫外光或X射线辐照的掺Eu氯化钾(KCl：Eu)荧光粉晶体中观察到了峰值约为430 nm的强烈光激发发光(OSL)。随着紫外光或X射线辐照剂量的增加，光致发光强度增大。这表明KCl：Eu荧光粉晶体可作为利用光致发光现象制作二维紫外光或X射线成像传感器的材料。所得结果与420 nm OSL峰的发射机制是一致的，该发射机制是基于F中心释放的电子与Eu3+离子的复合。讨论了紫外光辐照KCl：Eu荧光粉晶体中光致发光的激发机制。
Intense optically stimulated luminescence (OSL) with a peak at about 430 nm is observed in ultraviolet (UV)‐ray or x‐ray irradiated europium‐doped potassium chloride (KCl:Eu) phosphor crystals. The OSL intensity is increased with increasing UV‐ray or x‐ray irradiation dose. This suggests that KCl:Eu phosphor crystal is useful as a material for two‐dimensional UV‐ray or x‐ray imaging sensor utilizing OSL phenomenon. The results obtained are consistent with the proposed emission mechanisms of the 420 nm OSL peak, based on the recombination of electrons released from the F centers with Eu3+ ions. The excitation mechanism for the OSL in UV‐ray irradiated KCl:Eu phosphor crystals is also discussed.