Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes
Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes
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DOI：
10.1109/jstqe.2015.2389529
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发表时间：
2015-01
影响因子：
4.9
通讯作者：
Jhih-Kai Huang;Che-yu Liu;Tzi-Pei Chen;Hung-Wen Huang;F. Lai;Po-Tsung Lee;Chung-Hsiang Lin;Chun-Yen Chang;T. Kao;H. Kuo
中科院分区：
文献类型：
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作者：
Jhih-Kai Huang;Che-yu Liu;Tzi-Pei Chen;Hung-Wen Huang;F. Lai;Po-Tsung Lee;Chung-Hsiang Lin;Chun-Yen Chang;T. Kao;H. Kuo
具有位于微孔阵列中的直纳米棒的混合结构的高光提取GaN基发光二极管（LED）已经被成功地展示。通过纳米压印和光刻技术，可以制备出高深宽比的光导InGaN/GaN纳米棒，并将其规则地排列在微孔中，从而大大提高GaN基LED器件的光提取率。在25.4 A/cm 2的驱动电流下，混合纳米棒LED的光输出功率为22.04 mW，比传统GaN基LED提高了38.7%。此外，通过修改混合结构的尺寸和位置，可以重新分配发射的光能以获得具有均匀光场分布的发光器件。
High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm2, an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions.