A novel SnO2/Al discrete gate ISFET pH sensor with CMOS standard process
A novel SnO2/Al discrete gate ISFET pH sensor with CMOS standard process
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DOI：
10.1016/s0925-4005(00)00739-5
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发表时间：
2001-04-30
影响因子：
8.4
通讯作者：
Hsiung, SK
中科院分区：
文献类型：
--
作者：
Chin, YL;Chou, JC;Hsiung, SK
在本文中，我们提出了一种允许工业生产集成离子敏感场效应晶体管（ISFET）传感器的方法。采用ASIC CMOS标准工艺集成传感器和信号处理电路；然后通过溅射在传感器上镀上传感膜（SnO2）。 ISFET的结构是新颖的SnO2/Al离散栅极。分立栅极 ISFET 和读出电路采用传统标准 CMOS IC 工艺制造，无需额外掩模。实验数据表明，SnO2/Al 分立栅极 ISFET 传感器在 pH 2 至 10 的浓度范围内具有 58 mV/pH 的高线性度。本研究中设计并评估了单片分立栅极 ISFET pH 传感器的低偏移和低功耗读出电路。 (C) 2001 Elsevier Science B.V. 保留所有权利。
In this paper, we present a method allowing industrial production of integrated ion sensitive field effect transistor (ISFET) sensor. An ASIC CMOS standard process is used to integrate the sensor and signal processing circuit; then the sensor is plated with the sensing membrane (SnO2) by sputtering. The structure of the ISFET is novel SnO2/Al discrete gate. The discrete gate ISFET and the readout circuit were fabricated with a conventional standard CMOS IC process where no extra mask was required. The experimental data show that the SnO2/Al discrete gate ISFET sensors have a high linearity of 58 mV/pH in a concentration ranging from pH 2 to 10. The low offset and low power readout circuit for the discrete gate ISFETs pH sensor was designed and evaluated for monolithic in this study. (C) 2001 Elsevier Science B.V. All rights reserved.