Nanomanipulation and electrical behaviour of a single gold nanowire using in-situ SEM-FIB-nanomanipulators
Nanomanipulation and electrical behaviour of a single gold nanowire using in-situ SEM-FIB-nanomanipulators
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使用原位 SEM-FIB 纳米操纵器对单根金纳米线进行纳米操纵和电学行为
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
B. Inkson
中科院分区：
文献类型：
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作者：
Yong Peng;I. Luxmoore;M. Forster;A. Cullis;B. Inkson
采用直流电沉积技术，在阳极氧化铝模板上成功制备了金纳米线。用扫描电子显微镜和透射电子显微镜观察了AAO模板制备的55 nm金纳米线的微观结构，结果表明其为多晶结构，为竹子状结构，晶粒度为20 nm~几微米。单个的金纳米线被从成束的金纳米线中取出，方法是使用一个超锋利的W尖端连接到安装在SEM-FIB上的原位Kleindek纳米操纵器上。然后，将拾取的金纳米线沉积到硅片上，或连接在两个纳米操纵器尖端之间，以制造用于电气测试的单根纳米线纳米电路。对两种电路类型的单根操纵纳米线和成束金纳米线的电学性质进行了比较。通过将金纳米线连接在两个FIB碾磨的钨尖端之间，实现了最低的电阻。
Gold nanowires were successfully fabricated by a DC electrodeposition technique into Anodic Aluminium Oxide (AAO) templates. The microstructure of 55nm gold nanowires released from AAO templates was observed by SEM and TEM to be polycrystalline, with a bamboo-type structure and grain sizes 20nm to several micrometers. Individual gold nanowires were picked up from bundles of gold nanowires using a super-sharp W tip attached to an in-situ Kleindiek nanomanipulator fitted in a SEM-FIB. The picked-up gold nanowires were then deposited onto a silicon wafer, or connected between two nanomanipulator tips, to fabricate single nanowire nano-circuits for electrical testing. The electrical properties of single manipulated nanowires are compared to that of bundles of gold nanowires for the two circuit types. The lowest resistance is achieved by connecting the gold nanowires between two FIB-milled tungsten tips.