ELECTRON MOBILITY IN SEMICONDUCTING STRONTIUM TITANATE
ELECTRON MOBILITY IN SEMICONDUCTING STRONTIUM TITANATE
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DOI：
10.1103/physrev.155.796
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发表时间：
1967-01-01
期刊：
影响因子：
--
通讯作者：
CHAPMAN, PW
中科院分区：
文献类型：
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作者：
TUFTE, ON;CHAPMAN, PW
在1.6 ~ 550 K温度范围内测量了半导体SrTiO 3的电子霍耳迁移率。通过还原或掺杂铌，可以获得1× 10 17 ~ 2.5× 10 19 cm− 3的电子浓度。铌施主中心保持完全电离的最低温度调查。在所研究的浓度范围内，掺铒SrTi O 3的低温迁移率大约是还原SrTi O 3的4倍，在电子浓度约为2× 10 17 cm-3的掺铒样品中测得的迁移率值高达2.2× 10 4 cm 2/V sec。迁移率的结果进行比较预期的行为散射电离缺陷和极性光学晶格模式在低温和高温下，分别。
The electron Hall mobility has been measured in semiconducting SrTi O 3 over the temperature range from 1.6 to 550 K. Electron concentrations in the range from 1× 10 17 to 2.5× 10 19 cm− 3 were obtained by reduction or by doping with niobium. The niobium donor centers remain fully ionized down to the lowest temperatures investigated. The low-temperature mobility in niobium-doped SrTi O 3 is approximately 4 times larger than in reduced SrTi O 3 over the concentration range investigated, and mobility values up to 2.2× 10 4 cm 2/V sec were measured in niobium-doped samples having electron concentrations of approximately 2× 10 17 cm− 3. The mobility results are compared with the behavior expected for scattering by ionized defects and polar optical lattice modes at low and high temperatures, respectively.