Defect control for large remanent polarization in bismuth titanate ferroelectrics doping effect of higher-valent cations
Defect control for large remanent polarization in bismuth titanate ferroelectrics doping effect of higher-valent cations
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DOI：
10.1143/jjap.39.l1259
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发表时间：
2000-12-15
期刊：
影响因子：
--
通讯作者：
Miyayama, M
中科院分区：
文献类型：
--
作者：
Noguchi, YJ;Miwa, I;Miyayama, M
研究了通过淬火和高价阳离子掺杂控制的缺陷浓度和分布对致密Bi 4 Ti 3 O 12陶瓷铁电性能的影响。从800 ℃（高于居里温度）淬火的非掺杂陶瓷的回复极化（P-r）是缓慢冷却到25 ℃并从600 ℃（低于居里温度）淬火的样品的两倍。这些结果意味着畴钉扎缺陷占主导地位的极化特性。钒和钨掺入Ti位显著降低了畴钉扎的影响，导致非常大的2 P（r）超过40 μ C/cm（2）。
The effects of concentration and distribution of defects controlled by quenching and doping of higher-valent cations on the ferroelectric properties of dense Bi4Ti3O12 ceramics were investigated. The remanent polarization (P-r) of non-doped ceramics quenched from 800 degreesC (above the Curie temperature) was twice as large as those of samples subjected to slow cooling to 25 degreesC and quenched from 600 degreesC (below the Curie temperature). These results imply that domain pinning by defects dominates the polarization properties. The incorporation of vanadium and tungsten into Ti site significantly reduced the influence of domain pinning, resulting in a very large 2P(r) over 40 muC/cm(2).