Soft-Phonon-Induced Raman Scattering in IV-VI Compounds
Soft-Phonon-Induced Raman Scattering in IV-VI Compounds
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DOI：
10.1103/physrevlett.39.143
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发表时间：
1977-07
影响因子：
8.6
通讯作者：
T. Shimada;K. Kobayashi;Y. Katayama;K. Komatsubara
中科院分区：
文献类型：
--
作者：
T. Shimada;K. Kobayashi;Y. Katayama;K. Komatsubara
在正菱面体相变温度Tc和零能隙温度T B下，在Pb 1− x Sn x Te（x= 0− 1）单晶中观察到拉曼强度的异常增加。这些都归因于拉曼散射增强软化的TO声子附近的TC，也允许增强带间混合效应附近的T B。这些带间混合效应不仅增强了拉曼强度，而且使Tc增大。
At both the cubic-rhombohedral phase-transition temperature T c and the zero-gap temperature T b, anomalous increases in Raman intensities are observed in Pb 1− x Sn x Te (for x= 0− 1) single crystals. These are attributed to Raman scattering enhanced by the softening of the TO phonon near T c and also allowed by enhanced interband-mixing effects near T b. These interband-mixing effects not only enhance the Raman intensity, but also increase T c.