Pt2 + , 4+ ions in CeO2 rf‐sputtered thin films
Pt2 + , 4+ ions in CeO2 rf‐sputtered thin films
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DOI：
10.1002/sia.3327
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发表时间：
2010-06
影响因子：
1.7
通讯作者：
V. Matolín;I. Khalakhan;I. Matolínová;M. Václavů;K. Veltruská;M. Vorokhta
中科院分区：
文献类型：
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作者：
V. Matolín;I. Khalakhan;I. Matolínová;M. Václavů;K. Veltruská;M. Vorokhta
利用X射线光电子能谱（XPS）研究了在正常入射、掠射入射和多壁碳纳米管（MWCNTs）上沉积的Pt掺杂氧化铈层中Pt与CeO2的相互作用。采用射频磁控溅射法制备了30 nm厚的Pt掺杂CeO2层。XPS显示薄膜中形成了完全电离的Pt2 +， 4+的氧化铈。Pt2+/Pt4+比值取决于沉积角度，在薄膜沉积在MWCNTs上时，Pt2+/Pt4+比值增大。这种行为可以用沉积角度对多晶膜晶粒形貌的依赖性来解释。版权所有©2010 John Wiley & Sons， Ltd
The interaction of Pt with CeO2 in Pt‐doped cerium oxide layers deposited on a Si wafer at normal and grazing incidence, and on multiwall carbon nanotubes (MWCNTs), was investigated by using X‐ray photoelectron spectroscopy (XPS). 30‐nm‐thick Pt‐doped CeO2 layers were deposited by rf‐magnetron sputtering of a composite CeO2–Pt target. XPS showed formation of cerium oxide with completely ionized species Pt2 + , 4+ embedded in the film. The Pt2+/Pt4+ ratio depends on the deposition angle and increases in the case of the film deposition on the MWCNTs. This behavior was explained by the dependence of the polycrystalline film grain morphology on a deposition angle. Copyright © 2010 John Wiley & Sons, Ltd.