Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactor
Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactor
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螺旋扩散反应器中低压和低温沉积的二氧化硅薄膜的表征
DOI：
10.1116/1.578675
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
C. Cardinaud
中科院分区：
文献类型：
--
作者：
C. Charles;G. Giroult‐Matlakowski;R. Boswell;A. Goullet;G. Turban;C. Cardinaud
通过氧/硅烷螺旋扩散射频等离子体在低压（几毫托）和低基底温度（<200°C）下沉积二氧化硅薄膜。在 800 W 射频源功率下可实现高沉积速率 (20–80 nm/min)。研究了氧/硅烷流量比 (R) 对薄膜性能的影响：通过原位椭圆光度法、异位傅里叶变换红外光谱、卢瑟福背散射、X射线光电子能谱 (XPS) 和化学蚀刻速率测量 (P 蚀刻) 对沉积薄膜进行了表征，并将结果与热生长氧化物进行了比较。沉积动力学对内部薄膜结构有很大影响：对于具有良好化学计量的薄膜（[O]/[Si]≥1.95，R≥3），沉积速率的降低伴随着折射率、P蚀刻速率和XPS线宽的降低，以及Si-O拉伸峰值频率向热氧化物各自值的增加。 ...
Silicon dioxide films have been deposited at low pressure (a few millitorr) and low substrate temperature (<200 °C) by oxygen/silane helicon diffusion radio frequency plasmas. High deposition rates (20–80 nm/min) are achieved at 800 W rf source power. The effect of the oxygen/silane flow rate ratio (R) on the film properties has been investigated: characterization of the deposited films has been carried out by in situ ellipsometry, ex situ Fourier transform infrared spectroscopy, Rutherford backscattering, x‐ray photoelectron spectroscopy (XPS), and chemical etch rate measurements (P etch) and the results have been compared to thermally grown oxide. The deposition kinetics has a great effect on the internal film structure: for films presenting a good stoichiometry ([O]/[Si]≥1.95 for R≥3), a decrease in the deposition rate is accompanied by a decrease of the refractive index, P‐etch rate and XPS line width and by an increase of the Si–O stretching peak frequency toward the thermal oxide respective values. ...