Silicon Photomultiplier Technology at STMicroelectronics
Silicon Photomultiplier Technology at STMicroelectronics
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DOI：
10.1109/tns.2009.2024418
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发表时间：
2009-08-01
影响因子：
1.8
通讯作者：
Finocchiaro, Paolo
中科院分区：
文献类型：
--
作者：
Mazzillo, Massimo;Condorelli, Giovanni;Finocchiaro, Paolo
在本文中，我们提出的第一个电气和光学特性的结果进行1总面积硅光电倍增管（SiPM）在标准的硅平面技术制造的意法半导体卡塔尼亚研发洁净室设施。该器件由289个微单元组成，几何填充因子为48%。在实验室中测量了器件的击穿电压、增益、暗噪声率、串扰、光子探测效率和线性度。通过改变施加到器件的温度来进行光学表征。实验结果表明，该器件具有较低的暗噪声率和像素间串扰概率、较高的光子探测效率、良好的线性度和单光电子分辨率。鉴于光电探测器在正电子发射断层扫描（PET）中的最终应用，这些特性可以被认为是非常有前途的。
In this paper we present the results of the first electrical and optical characterization performed on 1 total area Silicon Photomultipliers (SiPM) fabricated in standard silicon planar technology at the STMicroelectronics Catania R&D clean room facility. The device consists of 289 microcells and has a geometrical fill factor of 48%. Breakdown voltage, gain, dark noise rate, crosstalk, photon detection efficiency and linearity have been measured in our laboratories. The optical characterization has been performed by varying the temperature applied to the device. The results shown in the manuscript demonstrate that the device already exhibits relevant features in terms of low dark noise rate and inter-pixel crosstalk probability, high photon detection efficiency, good linearity and single photoelectron resolution. These characteristics can be considered really promising in view of the final application of the photodetector in the Positron Emission Tomography (PET).