Simulation of Ultrasubmicrometer-Gate $hbox{In}_{0.52} hbox{Al}_{0.48}hbox{As/In}_{0.75}hbox{Ga}_{0.25}hbox{As/In}_{0.52}hbox{Al}_{0.48}hbox{As/InP}$ Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator
Simulation of Ultrasubmicrometer-Gate $hbox{In}_{0.52} hbox{Al}_{0.48}hbox{As/In}_{0.75}hbox{Ga}_{0.25}hbox{As/In}_{0.52}hbox{Al}_{0.48}hbox{As/InP}$ Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator
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超亚微米栅极模拟 $hbox{In}_{0.52} hbox{Al}_{0.48}hbox{As/In}_{0.75}hbox{Ga}_{0.25}hbox{As/In
DOI：
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发表时间：
2007
影响因子：
3.1
通讯作者：
M. Saraniti
中科院分区：
文献类型：
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作者：
J. Ayubi;D. Ferry;S. Goodnick;R. Akis;M. Saraniti
利用全波段蜂窝蒙特卡罗模拟器模拟了伪晶掺杂的超亚微米栅极高电子迁移率晶体管。在70 nm栅极长度下，实验结果与数值结果吻合较好。我们讨论了该装置的缩放到更短的栅极长度，以及各种尺寸在结构中所起的作用。20nm栅极长度的器件应该可以毫无困难地产生1.5太赫兹以上的傅立叶变换效应。本文展示了基于粒子的模拟工具在捕获负责设备操作的相关物理和性能优化的关键方面的能力。
Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce fTs above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.