Roles of hydrogen dilution on the microstructural and optoelectronic properties of B-doped nanocrystalline Si:H thin films
Roles of hydrogen dilution on the microstructural and optoelectronic properties of B-doped nanocrystalline Si:H thin films
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DOI：
10.1063/1.1664028
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发表时间：
2004-03
影响因子：
3.2
通讯作者：
M. H. Gullanar;Huanyang Chen;W. Wei;R. Cui;W. Shen
中科院分区：
文献类型：
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作者：
M. H. Gullanar;Huanyang Chen;W. Wei;R. Cui;W. Shen
我们通过x射线衍射、扫描电镜、拉曼散射、光学透射、温度相关暗电导率和弹性反冲检测分析（ERDA）测量，报道了氢稀释对等离子体增强化学气相沉积在玻璃基板上生长的掺硼纳米晶硅薄膜的微观结构和光电性能的影响。随着氢稀释比ΔH的增大，晶粒尺寸、结晶度、吸收系数、折射率和电导率基本降低。由于量子尺寸效应，发现Tauc的光学带隙随着ΔH而增加。利用氢离子轰击效应制备了一种新型复合材料[J]。达成。Phys. 93, 1262(2003)]以及氢诱导退火效应，ΔH中氢含量的明显增加以及ERDA中不同的氢分布有助于我们阐明氢稀释度与结晶度和晶粒尺寸的相关性。这一论点得到了证实。
We report on the roles of hydrogen dilution on the microstructural and optoelectronic properties of boron-doped nanocrystalline silicon thin films grown by plasma-enhanced chemical vapor deposition on glass substrates, through x-ray diffraction, scanning electron microscope, Raman scattering, optical transmission, temperature-dependent dark conductivity, and elastic recoil detection analysis (ERDA) measurements. The grain size, crystallinity, absorption coefficient, refractive index, and conductivity are found to decrease basically with increasing hydrogen dilution ratio ΔH. The Tauc’s optical band gap is found to increase with ΔH due to the quantum size effect. By the aid of hydrogen ion bombardment effect [J. Appl. Phys. 93, 1262 (2003)] as well as the hydrogen-induced annealing effect, the clear increase of hydrogen content with ΔH and the different hydrogen distribution from ERDA help us to elucidate the correlation of hydrogen dilution with the crystallinity and grain size. The argument has been furt...