A flexible, gigahertz, and free-standing thin film piezoelectric MEMS resonator with high figure of merit
A flexible, gigahertz, and free-standing thin film piezoelectric MEMS resonator with high figure of merit
复制标题
具有高品质因数的灵活、千兆赫、独立式薄膜压电 MEMS 谐振器
DOI：
10.1063/1.4993901
复制
发表时间：
2017-07-10
影响因子：
4
通讯作者：
Pang, Wei
中科院分区：
文献类型：
--
作者：
Jiang, Yuan;Zhang, Menglun;Pang, Wei
In this paper, a 2.6 GHz air-gap type thin film piezoelectric MEMS resonator was fabricated on a flexible polyethylene terephthalate film. A fabrication process combining transfer printing and hot-embossing was adopted to form a free-standing structure. The flexible radio frequency MEMS resonator possesses a quality factor of 946 and an effective coupling coefficient of 5.10%, and retains its high performance at a substrate bending radius of 1 cm. The achieved performance is comparable to that of conventional resonators on rigid silicon wafers. Our demonstration provides a viable approach to realizing universal MEMS devices on flexible polymer substrates, which is of great significance for building future fully integrated and multi-functional wireless flexible electronic systems.
