Printed, Flexible, Organic Nano-Floating-Gate Memory: Effects of Metal Nanoparticles and Blocking Dielectrics on Memory Characteristics
Printed, Flexible, Organic Nano-Floating-Gate Memory: Effects of Metal Nanoparticles and Blocking Dielectrics on Memory Characteristics
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DOI：
10.1002/adfm.201203417
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发表时间：
2013-07-26
影响因子：
19
通讯作者：
Kim, Dong-Yu
中科院分区：
文献类型：
--
作者：
Kang, Minji;Baeg, Kang-Jun;Kim, Dong-Yu
研究了采用阻挡介质层和金属纳米颗粒作为电荷捕获点对有机纳米浮栅存储器件特性的影响。使用n型聚合物半导体、聚{[N，N-双（2-辛基十二烷基）-萘-1，4，5，8-双（二甲酰亚胺）-2，6-二基]-alt-5，5-（2，2-联噻吩）}（P（NDI 2 OD-T2））和各种金属NP制造高性能NFGM器件。这些纳米颗粒嵌入各种聚合物凝胶（聚苯乙烯（PS）/聚（4-乙烯基苯酚）（PVP）和PS/聚（甲基丙烯酸甲酯）（PMMA））的双层内。的P基于（NDI 2 OD-T2）有机场效应晶体管（OFET）的NFGM器件表现出高电子迁移率（0.4-0.5 cm（2）V-1 s（-1））和可靠的非易失性存储器特性，包括宽存储器窗口（约52 V），高开/关电流比（I-on/I-off近似为10（5）），以及长的外推保留时间（>10（7）s），这取决于阻挡电介质的选择（PVP或PMMA）和金属（Au、Ag、Cu或Al）NP。在使用PMMA和Au或Ag NP制造的存储器中实现了最佳的存储器特性。具有PMMA和空间上均匀分布的Cu纳米颗粒的NFGM器件显示出准永久保持特性。还制造了在聚萘二甲酸乙二醇酯衬底上具有Au-NP的喷墨印刷柔性P（NDI 2 OD-T2）256位晶体管存储器阵列（16 X 16个晶体管）。阵列中的这些存储器器件表现出高的I-on/I-off（约为10（4 +/-0.85））、宽的存储器窗口（约为43.5V +/-8.3V）和高度的可靠性。
The effects of using a blocking dielectric layer and metal nanoparticles (NPs) as charge-trapping sites on the characteristics of organic nano-floating-gate memory (NFGM) devices are investigated. High-performance NFGM devices are fabricated using the n-type polymer semiconductor, poly{[N,N-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5-(2,2-bithiophene)} (P(NDI2OD-T2)), and various metal NPs. These NPs are embedded within bilayers of various polymer dielectrics (polystyrene (PS)/poly(4-vinyl phenol) (PVP) and PS/poly(methyl methacrylate) (PMMA)). The P(NDI2OD-T2) organic field-effect transistor (OFET)-based NFGM devices exhibit high electron mobilities (0.4-0.5 cm(2) V-1 s(-1)) and reliable non-volatile memory characteristics, which include a wide memory window (approximate to 52 V), a high on/off-current ratio (I-on/I-off approximate to 10(5)), and a long extrapolated retention time (>10(7) s), depending on the choice of the blocking dielectric (PVP or PMMA) and the metal (Au, Ag, Cu, or Al) NPs. The best memory characteristics are achieved in the ones fabricated using PMMA and Au or Ag NPs. The NFGM devices with PMMA and spatially well-distributed Cu NPs show quasi-permanent retention characteristics. An inkjet-printed flexible P(NDI2OD-T2) 256-bit transistor memory array (16 x 16 transistors) with Au-NPs on a polyethylene naphthalate substrate is also fabricated. These memory devices in array exhibit a high I-on/I-off (approximate to 10(4 +/- 0.85)), wide memory window (approximate to 43.5 V +/- 8.3 V), and a high degree of reliability.