Improved Transistor Performance of Isoindigo-Based Conjugated Polymers by Chemically Blending Strongly Electron-Deficient Units with Low Content To Optimize Crystal Structure
Improved Transistor Performance of Isoindigo-Based Conjugated Polymers by Chemically Blending Strongly Electron-Deficient Units with Low Content To Optimize Crystal Structure
复制标题
通过化学共混低含量的强缺电子单元来优化晶体结构,改善异靛蓝基共轭聚合物的晶体管性能
DOI:
10.1021/acs.macromol.7b02309
复制
发表时间:
2018-01-23
期刊:
影响因子:
5.5
通讯作者:
Zhang, Guobing
中科院分区:
文献类型:
--
作者:
Liu, Yu;Wang, Feifei;Zhang, Guobing
Conjugated polymers have received tremendous attention because of their potential application in flexible electronic devices. In addition to synthesizing new conjugated polymers, different methods have been used to improve charge carrier transport. The simple random polymer strategy was used to enhance the charge carrier mobility of isoindigo (ID)-based conjugated polymers by chemically blending a small amount of strongly electron-deficient bis(2-oxoindolin-3-ylidene)benzodifurandione (BIBDF) units. In comparison with a parent polymer (P0) without BIBDF in its polymer backbone, the hole mobilities of random polymers were remarkably enhanced by the chemical blending of BIBDF with low content (<5 mol %). The polymer with 3.75 mol % BIBDF exhibited the highest mobility, 2.17 cm2 V–1 s–1 with a high Ion/Ioff ratio over 106, which was 3 times higher than that of the organic field effect transistors (OFETs) fabricated from the reference D–A polymer P0. The thin films of very polymer were characterized by grazin...