Improved Transistor Performance of Isoindigo-Based Conjugated Polymers by Chemically Blending Strongly Electron-Deficient Units with Low Content To Optimize Crystal Structure

Improved Transistor Performance of Isoindigo-Based Conjugated Polymers by Chemically Blending Strongly Electron-Deficient Units with Low Content To Optimize Crystal Structure
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通过化学共混低含量的强缺电子单元来优化晶体结构,改善异靛蓝基共轭聚合物的晶体管性能

DOI:
10.1021/acs.macromol.7b02309
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发表时间:
2018-01-23
期刊:
影响因子:
5.5
通讯作者:
Zhang, Guobing
Zhang, Guobing
中科院分区:
化学1区
文献类型:
--
作者:
Liu, Yu;Wang, Feifei;Zhang, Guobing

文献摘要

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共轭聚合物由于其在柔性电子器件中的潜在应用而受到极大的关注。除了合成新的共辄聚合物之外,已经使用不同的方法来改善电荷载流子传输。采用简单的无规聚合物策略,通过化学共混少量强缺电子的二(2-氧代吲哚啉-3-亚基)苯并二呋喃二酮(BIBDF)单元,提高了异靛蓝(ID)基共轭聚合物的载流子迁移率.与聚合物主链中不含BIBDF的母体聚合物(P0)相比,低含量(<5 mol %)的BIBDF的化学共混显著提高了无规聚合物的空穴迁移率。具有3.75 mol % BIBDF的聚合物表现出最高的迁移率,2.17 cm 2 V-1 s-1,具有超过106的高Ion/Ioff比,这是由参考D-A聚合物P0制造的有机场效应晶体管(OFFET)的3倍。用扫描电镜对薄膜进行了表征。
Conjugated polymers have received tremendous attention because of their potential application in flexible electronic devices. In addition to synthesizing new conjugated polymers, different methods have been used to improve charge carrier transport. The simple random polymer strategy was used to enhance the charge carrier mobility of isoindigo (ID)-based conjugated polymers by chemically blending a small amount of strongly electron-deficient bis(2-oxoindolin-3-ylidene)benzodifurandione (BIBDF) units. In comparison with a parent polymer (P0) without BIBDF in its polymer backbone, the hole mobilities of random polymers were remarkably enhanced by the chemical blending of BIBDF with low content (<5 mol %). The polymer with 3.75 mol % BIBDF exhibited the highest mobility, 2.17 cm2 V–1 s–1 with a high Ion/Ioff ratio over 106, which was 3 times higher than that of the organic field effect transistors (OFETs) fabricated from the reference D–A polymer P0. The thin films of very polymer were characterized by grazin...