Chemical Solution Deposition of Ferroelectric Hafnium Oxide for Future Lead Free Ferroelectric Devices
Chemical Solution Deposition of Ferroelectric Hafnium Oxide for Future Lead Free Ferroelectric Devices
复制标题
DOI：
10.1149/2.0061512jss
复制
发表时间：
2015-01-01
影响因子：
2.2
通讯作者：
Boettger, Ulrich
中科院分区：
文献类型：
--
作者：
Starschich, Sergej;Griesche, David;Boettger, Ulrich
研究了一种改进的铁电氧化铪化学溶液沉积工艺的相形成及其掺杂类型的影响。研究了掺杂钇和掺杂不同镧系元素的铁电性质。样品采用铂电极和厚度为45 nm的氧化铪层制备。DTA-TG分析、厚度测量和与温度相关的XRD研究相结合，可以深入了解不同制造步骤中的薄膜形成过程。极化和电容测量证明了沉积层的铁电性质。钇的浓度变化范围从0摩尔%到11摩尔%，证明对铁电性能有很强的影响，这与对原子层沉积（ALD）制备样品的观察结果一致。当钇掺杂浓度为5.2 mol%时，在1.4 MV cm（-1）的矫顽力场下，获得了20 μ C cm（-2）的高剩余极化。通过CSD沉积铁电氧化铪薄膜的可能性为无铅压电和热释电传感器和执行器的应用提供了机会，并可以更好地了解铁电相的形成。(C) 2015中国电化学会。版权所有。
The phase formation and the influence of the type of dopant of an improved routine for chemical solution deposition (CSD) of ferroelectric hafnium oxide films are investigated. Ferroelectric properties for yttrium doping and doping with different elements from the lanthanide group are shown. The samples are prepared using platinum electrodes and a hafnium oxide layer with a thickness of 45 nm. The combination of DTA-TG analysis, thickness measurements and temperature dependent XRD study provide insight into the film formation process during the different fabrication steps. Polarization and capacitance measurements are performed to prove the ferroelectric nature of the deposited layers. The yttrium concentration is varied in a range from 0 mol% to 11 mol% proving to have a strong influence on the ferroelectric properties in agreement with the observation made on atomic layer deposition (ALD) prepared samples. A high remanent polarization of 20 mu C cm(-2) is attained with a coercitive field of 1.4 MV cm(-1) for an yttrium doping concentration of 5.2 mol%. The possibility of depositing ferroelectric hafnium oxide films by CSD provides the opportunity of application for lead free piezoelectric and pyroelectric sensors and actuators and can lead to a better insight into the formation of the ferroelectric phase. (C) 2015 The Electrochemical Society. All rights reserved.