Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating
Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating
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DOI：
10.1109/led.2018.2889412
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发表时间：
2019-02-01
影响因子：
4.9
通讯作者：
Slesazeck, Stefan
中科院分区：
文献类型：
--
作者：
Mulaosmanovic, Halid;Breyer, Evelyn T.;Slesazeck, Stefan
This letter investigates the impact of self-heating on the post-cycling functionality of a scaled hafnium oxide-based ferroelectric field-effect transistor (FeFET). The full recovery of FeFET switching properties and data retention after the cycling endurance failure is reported. This is achieved by damage annealing through localized heating, which is intentionally induced by a large current flow through the drain (source)-body p-n junctions. The results highlight that the local thermal treatments could be exploited to extend the cycling endurance of FeFETs.
